AGR19045EF Description
AGR19045EF 45 W, 1930 MHz 1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal munication service (PCS) (1930 MHz 1990 MHz), global system for mobile munication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power...
AGR19045EF Key Features
- P1dB: 50 W typical
- Power gain @ P1dB = 14.0 dB continuous wave (CW)
- Efficiency @ P1dB = 54% typical CW
- Return loss: -10 dB
- 885 kHz and f2 + 885 kHz. Third-order intermodulation distortion (IM3) measured over a 1.2288 MHz BW at f1
- 2.5 MHz and f2 + 2.5 MHz
- Output power (POUT): 9.5 W
- Power gain: 15 dB
- Efficiency: 24.8%
- IM3: -34.5 dBc