Full PDF Text Transcription for AGR19045EF (Reference)
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AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMO...
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5 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications. GSM Features Typical performance over entire GSM band: — P1dB: 50 W typical. — Power gain @ P1dB = 14.0 dB continuous wave (CW). — Efficiency @ P1dB = 54% typical CW. — Return loss: –10 dB. Device Performance Features High-reliability, gold-metalization process. Low hot carrier inje
AGR19045EF Datasheet
