Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Typical performance ratings for GSM EDGE (f = 1.840 GHz, POUT = 50 W).
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Product Brief AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused me...
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125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is manufactured using advanced LDMOS technology offering state-of-theart performance and reliability. It is packaged in an industry-standard package and is capable of delivering a minimum output power of 125 W which makes it ideally suited for today’s RF power amplifier applications. ) Table 1.
AGR18125E Datasheet
