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Product Brief
AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Introduction
The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is manufactured using advanced LDMOS technology offering state-of-theart performance and reliability. It is packaged in an industry-standard package and is capable of delivering a minimum output power of 125 W which makes it ideally suited for today’s RF power amplifier applications.
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Table 1.
AGR18125E Datasheet
