AGR18125E Overview
Product Brief AGR18125E 125 W, 1.805 GHz 1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile munication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is...
AGR18125E Key Features
- Stresses in excess of the