AGR18090E Overview
Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz 1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile munication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is manufactured...
AGR18090E Key Features
- Modulation spectrum: .. @ ±400 kHz = -63 dBc. @ ±600 kHz = -73 dBc
- Error vector magnitude (EVM) = 1.7%
- Gain = 15 dB
- Drain Efficiency = 31%. Typical continuous wave (CW) performance over entire digital munication system (DCS) band
- P1dB: 90 W typ
- Power gain: @ P1dB = 14 dB
- Efficiency @ P1dB = 50% typ
- Return loss: -10 dB. High-reliability gold-metalization process. Low hot carrier injection (HCI) induced bias drift over
- Stresses in excess of the