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AGR18090E - Transistor

Key Features

  • Typical performance ratings for GSM EDGE (f = 1.840 GHz, POUT = 30 W):.
  • Modulation spectrum: www. DataSheet4U. com @ ±400 kHz =.
  • 63 dBc. @ ±600 kHz =.
  • 73 dBc.
  • Error vector magnitude (EVM) = 1.7%.
  • Gain = 15 dB.
  • Drain Efficiency = 31%. Typical continuous wave (CW) performance over entire digital communication system (DCS) band:.
  • P1dB: 90 W typ.
  • Power gain: @ P1dB = 14 dB.
  • Efficiency @ P1dB = 50% typ.
  • Return.

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Datasheet Details

Part number AGR18090E
Manufacturer TriQuint Semiconductor
File Size 366.88 KB
Description Transistor
Datasheet download datasheet AGR18090E Datasheet

Full PDF Text Transcription for AGR18090E (Reference)

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Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18090E is a high-voltage, gold-metalized, lateral...

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Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is manufactured using advanced LDMOS technology offering state-of-the-art performance and reliability. It is packaged in an industry-standard package and is capable of delivering a typical output power of 90 W, which makes it ideally suited for today’s wireless base station RF power amplifier applications. Table 1.