AGR18060E Overview
AGR18060E 60 W, 1805 MHz 1880 MHz, LDMOS RF Power Transistor Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system for mobile munication (GSM), and singlecarrier or multicarrier class AB power amplifier applications. It is packaged in an industry-standard...
AGR18060E Key Features
- Output power (POUT): 20 W
- Power gain: 15 dB
- Efficiency: 34%
- Modulation spectrum: @ ±400 kHz = -62 dBc. @ ±600 kHz = -73 dBc
- Error vector magnitude (EVM) = 2%. Typical performance over entire GSM band
- P1dB: 60 W typ
- Power gain: @ P1dB = 14 dB
- Efficiency @ P1dB = 52% typical
- Return loss: -10 dB. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift ove
- Stresses in excess of the