Datasheet Details
| Part number | AGR18090E |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 366.88 KB |
| Description | Transistor |
| Download | AGR18090E Download (PDF) |
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| Part number | AGR18090E |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 366.88 KB |
| Description | Transistor |
| Download | AGR18090E Download (PDF) |
|
|
|
Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications.
This device is manufactured using advanced LDMOS technology offering state-of-the-art performance and reliability.
It is packaged in an industry-standard package and is capable of delivering a typical output power of 90 W, which makes it ideally suited for today’s wireless base station RF power amplifier applications.
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