AGR21030EF Description
AGR21030EF 30 W, 2.110 GHz 2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications. Thermal Characteristics Parameter , Junction to Case Sym Rı JC...
AGR21030EF Key Features
- 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1
- 10 MHz and F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01% (probability) CCDF
- Output power: 7 W
- Power gain: 14.5 dB
- Efficiency: 26%
- IM3: -34 dBc
- ACPR: -37 dBc
- Return loss: -12 dB. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift ove
- Stresses in excess of the