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AGR21030EF Datasheet Transistor

Manufacturer: TriQuint Semiconductor

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Datasheet Details

Part number AGR21030EF
Manufacturer TriQuint Semiconductor
File Size 378.77 KB
Description Transistor
Download AGR21030EF Download (PDF)

Overview

AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications.

Table 1.

Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 2.0 Unit °C/W Table 2.

Key Features

  • Typical performance for 2 carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel BW, adjacent channel BW = 3.84 MHz at F1.
  • 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1.
  • 10 MHz and F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01% (probability) CCDF: www. DataSheet4U. com.
  • Output power: 7 W.
  • Power gain: 14.5 dB.
  • Efficiency: 26%.
  • IM3:.
  • 34 dBc.
  • ACPR:.
  • 37 dB.

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