Overview: AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications.
7 Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR21125EU AGR21125EF Sym Rı JC Rı JC Value 0.5 0.5 Unit °C/W °C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR21125EU AGR21125EF Derate Above 25 ˇ C: AGR21125EU AGR21125EF Operating Junction Temperature Storage Temperature Range Sym Value Unit VDSS 65 Vdc VGS –0.5, +15 Vdc PD PD — — TJ 350 350 2.0 2.0 200 W W W/°C W/°C °C AGR21125EU (unflanged) AGR21125EF (flanged) 48 5 Figure 1.
