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AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 2.0 Unit °C/W
Table 2. Absolute Maximum Ratings* Parameter Sym Value Drain-source Voltage VDSS 65 Gate-source Voltage VGS –0.5, 15 Total Dissipation at TC = 25 °C PD 87.5 Derate Above 25 ° C — 0.5 CW RF Input Power — 10 (VDS = 31 V) Operating Junction TemperaTJ 200 ture Storage Temperature Range TSTG –65, 150 Unit Vdc Vdc W W/°C W °C °C
Figure 1.
AGR21030EF Datasheet
