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AGR21090E - Transistor

Datasheet Summary

Features

  • Typical performance for 2 carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel BW, adjacent channel BW = 3.84 MHz at F1.
  • 5 MHz and F2 + 5 MHz. Third-order distortion is measured www. DataSheet4U. com over 3.84 MHz BW at F1.
  • 10 MHz and F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01% (probability) CCDF:.
  • Output power: 19 W.
  • Power gain: 14.5 dB.
  • Efficiency: 26%.
  • IM3:.
  • 33 dBc.
  • ACPR:.
  • 36 d.

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Datasheet Details

Part number AGR21090E
Manufacturer TriQuint Semiconductor
File Size 434.99 KB
Description Transistor
Datasheet download datasheet AGR21090E Datasheet
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AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code-division multiple access (W-CDMA), and single and multicarrier class AB wireless base station power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR21090EU AGR21090EF Sym Rı JC Rı JC Value 0.7 0.7 Unit °C/W °C/W Table 2.
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