Overview: AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code-division multiple access (W-CDMA), and single and multicarrier class AB wireless base station power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR21090EU AGR21090EF Sym Rı JC Rı JC Value 0.7 0.7 Unit °C/W °C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR21090EU AGR21090EF Derate Above 25 ˇ C: AGR21090EU AGR21090EF CW RF Input Power (VDS = 31 V) Operating Junction Temperature Storage Temperature Range Sym Value Unit 65 Vdc VDSS VGS –0.5, 15 Vdc PD PD — — — TJ 250 250 1.4 1.4 30 200 W W W/°C W/°C W °C °C AGR21090EU (unflanged) AGR21090EF (flanged) Figure 1.
