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AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 0.35 Unit °C/W
Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C Derate Above 25 ˇ C Operating Junction Temperature Storage Temperature Range Sym Value 65 VDSS VGS –0.5, 15 PD 500 — 2.86 TJ 200 TSTG –65, 150 Unit Vdc Vdc W W/°C °C °C
375D–03, STYLE 1
Figure 1.
AGR21180EF Datasheet
