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AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications.
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Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR21060EU AGR21060EF Sym Rı JC Rı JC Value 1.0 1.0 Unit °C/W °C/W
Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR21060EU AGR21060EF Derate Above 25 ° C: AGR21060EU AGR21060EF Operating Junction Temperature Storage Temperature Range Sym Value Unit VDSS 65 Vdc VGS –0.
AGR21060E Datasheet
