AGR21180EF Datasheet - TriQuint Semiconductor

AGR21180EF Transistor

AGR21180EF 180 W, 2.110 GHz 2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 0.35 Unit °C/W Table 2. Absolute Maximum.

AGR21180EF Features

* Typical performance for two carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel bandwidth (BW), adjacent channel BW = 3.84 MHz at www.DataSheet4U.com F1

* 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1

* 10 MHz and F2 +

AGR21180EF_TriQuintSemiconductor.pdf