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AGR21180EF Datasheet Transistor

Manufacturer: TriQuint Semiconductor

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Datasheet Details

Part number AGR21180EF
Manufacturer TriQuint Semiconductor
File Size 391.80 KB
Description Transistor
Datasheet download datasheet AGR21180EF Datasheet

Overview

AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code division multiple access (W-CDMA), single and multicarrier class AB wireless base station power amplifier applications.

Table 1.

Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 0.35 Unit °C/W Table 2.

Key Features

  • Typical performance for two carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel bandwidth (BW), adjacent channel BW = 3.84 MHz at www. DataSheet4U. com F1.
  • 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1.
  • 10 MHz and F2 + 10 MHz. Typical peak-to-average (P/A) ratio of 8.5 dB at 0.01% (probability) CCDF:.
  • Output power: 38 W.
  • Power gain: 14 dB.
  • Efficiency: 26%.
  • IM3:.
  • 36 dBc.

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