AGR26125E Datasheet Transistor

Manufacturer: TriQuint Semiconductor

AGR26125E transistor by TriQuint Semiconductor - Datasheet Preview

Datasheet Details

Part number	AGR26125E
Manufacturer	TriQuint Semiconductor
File Size	399.77 KB
Description	Transistor
Datasheet	AGR26125E Datasheet

Overview

AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for ultrahigh-frequency (UHF) applications including multichannel multipoint distribution service (MMDS) for broadcasting and communications.

) Table 1.

Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR26125EU AGR26125EF Sym Rı JC Rı JC Value 0.5 0.5 Unit °C/W °C/W Table 2.

Key Features

Typical pulsed P1dB, 6 µs pulse at 10% duty: 125 W. Typical performance for MMDS systems. f = 2600 MHz, IDQ = 1300 mA, Vds = 28 V, adjacent channel BW = 3.84 MHz, 5 MHz offset; alternate channel BW = 3.84 MHz, 10 MHz offset. Typical P/A ratio of 9.8 dB at 0.01% (probability) CCDF.
:.
Output power: 20 W www. DataSheet4U. com.
Power gain: 11.5 dB.
Power Added Efficiency (PAE): 19%.
ACLR1:.
35 dBc.
ACLR2:.
37 dBc. High-reliability, go.

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