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AGR26125E - Transistor

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TriQuint Semiconductor

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AGR26125E Transistor by TriQuint Semiconductor - Datasheet Preview — Datasheet preview – AGR26125E

Datasheet Details

Part number	AGR26125E
Manufacturer	TriQuint Semiconductor
File Size	399.77 KB
Description	Transistor
Datasheet	AGR26125E Datasheet
Additional preview pages of the AGR26125E datasheet.

Product details

Features

Typical pulsed P1dB, 6 µs pulse at 10% duty: 125 W. Typical performance for MMDS systems. f = 2600 MHz, IDQ = 1300 mA, Vds = 28 V, adjacent channel BW = 3.84 MHz, 5 MHz offset; alternate channel BW = 3.84 MHz, 10 MHz offset. Typical P/A ratio of 9.8 dB at 0.01% (probability) CCDF.
:.
Output power: 20 W www. DataSheet4U. com.
Power gain: 11.5 dB.
Power Added Efficiency (PAE): 19%.
ACLR1:.
35 dBc.
ACLR2:.
37 dBc. High-reliability, go.

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Published: Oct 5, 2009 |