AGR26180EF Description
Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz 2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for ultrahigh-frequency (UHF) applications, including multichannel multipoint distribution service (MMDS) for broadcasting and munications. Thermal...
AGR26180EF Key Features
- Output power: 27 W
- Power gain: 12.5 dB
- Efficiency: 20%
- ACPR: -33 dBc
- ACLR1: -35 dBc
- The test signal utilized is 4-channel W-CDMA Test Model 1. This test signal provides an equivalent reference (occupied b
- Stresses in excess of the