AGR26125E Description
AGR26125E 125 W, 2.5 GHz 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for ultrahigh-frequency (UHF) applications including multichannel multipoint distribution service (MMDS) for broadcasting and munications. Thermal Characteristics Parameter , Junction to...
AGR26125E Key Features
- Output power: 20 W
- Power gain: 11.5 dB
- Power Added Efficiency (PAE): 19%
- ACLR1: -35 dBc
- ACLR2: -37 dBc. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20
- The test signal utilized is 4-channel W-CDMA Test Model 1. This test signal provides an equivalent reference (occupied b
- Stresses in excess of the