Overview: AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for ultrahigh-frequency (UHF) applications including multichannel multipoint distribution service (MMDS) for broadcasting and communications.
) Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR26125EU AGR26125EF Sym Rı JC Rı JC Value 0.5 0.5 Unit °C/W °C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR26125EU AGR26125EF Derate Above 25 ° C: AGR26125EU AGR26125EF Operating Junction Temperature Storage Temperature Range Sym Value Unit VDSS 65 Vdc VGS –0.5, +15 Vdc PD PD — — TJ 350 350 2.0 2.0 200 W W W/°C W/°C °C AGR26125EU (unflanged) AGR26125EF (flanged) 5B 03 STYLE 1 Figure 1.
