AGR26045EF Datasheet Transistor

Manufacturer: TriQuint Semiconductor

AGR26045EF transistor by TriQuint Semiconductor - Datasheet Preview

Datasheet Details

Part number	AGR26045EF
Manufacturer	TriQuint Semiconductor
File Size	408.88 KB
Description	Transistor
Download	AGR26045EF Download (PDF)

Overview

AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for ultrahigh-frequency (UHF) applications, including multichannel multipoint distribution service (MMDS) for broadcasting and communications.

Table 1.

Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 1.5 Unit °C/W Table 2.

Key Features

Typical performance for MMDS systems. f = 2600 MHz, IDQ = 430 mA, Vds = 28 V, adjacent channel BW = 3.84 MHz, 5 MHz offset; alternate channel BW = 3.84 MHz, 10 MHz offset. Typical P/A ratio of 9.8 dB at 0.01% (probability) CCDF.
:.
Output power: 6.5 W.
Power gain: 13 dB.
Efficiency: 20%.
ACPR:.
34 dBc. www. DataSheet4U. com.
ACLR1:.
36 dBc.
Return loss:.
15 dB. Typical pulsed P1dB, 6 µs pulse at 10% duty: 47 W. H.

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