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AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for ultrahigh-frequency (UHF) applications, including multichannel multipoint distribution service (MMDS) for broadcasting and communications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 1.5 Unit °C/W
Table 2. Absolute Maximum Ratings* Parameter Sym Value Drain-source Voltage VDSS 65 Gate-source Voltage VGS –0.5, +15 Total Dissipation at TC = 25 °C PD 117 Derate Above 25 ° C — 0.67 Operating Junction TemperaTJ 200 ture Storage Temperature Range TSTG –65, +150 Unit Vdc Vdc W W/°C °C °C
Figure 1.
AGR26045EF Datasheet
