T1G6000528-Q3 Datasheet | TriQuint Semiconductor

7W, 28V, DC - 6 GHz, Ga N RF Power Transistor Applications - Wideband and narrowband defense and mercial munication systems - - General Purpose RF Power - - Jammers - - Radar - - Professional radio systems - - Wi MAX - - Wideband amplifiers - - Test instrumentation - - Cellular infrastructure Available Package Product Features - Frequency: DC to 6 GHz - Linear Gain: >10 d B at 6 GHz - Operating Voltage: 28 V - Output Power (P3d B): >7 W at 6 GHz - Lead-free and Ro HS pliant - Low thermal resistance package Package Information Package Type Q3 Description 5.0mm x 4.0mm ceramic air cavity straight lead package Base Cu Mo .Data Sheet.net/ General Description The Tri Quint T1G6000528-Q3 is a 7 W (P3d B) discrete Ga N on Si C HEMT which operates from DC to 6 GHz and typically provides >10 d B gain at 6 GHz. The device is constructed with Tri Quint’s proven 0.25 µm production process, which Features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Ordering Information Material No. 1075579 1081733 Part No. T1G6000528-Q3 T1G6000528-Q3EVB3 Description Packaged part Narrowband 3.0 to 3.5 GHz evaluation board ECCN EAR99 EAR99 Released Datasheet: Rev. K 8/11/2011 Copyright © 2011 Tri Quint Semiconductor, Inc. - 1- Disclaimer: Subject to change without notice Connecting the digital World to the Global Network® Datasheet pdf - http://..co.kr/...