T1G6000528-Q3 transistor equivalent, gan rf power transistor.
* Frequency: DC to 6 GHz
* Linear Gain: >10 dB at 6 GHz
* Operating Voltage: 28 V
* Output Power (P3dB): >7 W at 6 GHz
* Lead-free and RoHS compl.
* Wideband and narrowband defense and commercial communication systems
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– General P.
5.0mm x 4.0mm ceramic air cavity straight lead package Base CuMo
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General Description The TriQuint T1G6000528-Q3 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz..
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