T2G4003532-FL Datasheet | TriQuint Semiconductor

Features - Frequency: DC to 3.5 GHz - Output Power (P3d B): 28 W at 3.5 GHz - Linear Gain: >16 d B at 3.5 GHz - Operating Voltage: 32 V - Low thermal resistance package Functional Block Diagram General Description The Tri Quint T2G4003532-FL is a 30 W (P3d B) discrete Ga N on Si C HEMT which operates from DC to 3.5 GHz. The device is constructed with Tri Quint’s proven TQGa N25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS pliant Evaluation boards are available upon request. Pin Configuration Pin No. 1 2 Flange Label VD / RF OUT VG / RF IN Source Ordering Information Part ECCN T2G4003532-FL EAR99 T2G4003532FS/FL-EVB1 EAR99 Description Packaged part Flangeless 2.7-3.5 GHz Evaluation Board Datasheet: Rev - 12-30-13 © 2013 Tri Quint - 1 of 13 - Disclaimer: Subject to change without notice .triquint. 30W, 32V DC - 3.5 GHz, Ga N RF Power Transistor Absolute Maximum Ratings Parameter Breakdown Voltage (BVDG) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PD) RF Input Power, CW, T = 25°C (PIN) Channel Temperature (TCH) Mounting Temperature (30 Seconds) Value 100 V -7 to 0...