650V 7.5A N-Channel SJ-MOSFET
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
• 700V @TJ = 150 ℃
• Max. RDS(on) = 0.6Ω
• Ultra Low gate charge (typ. Qg = 14nC)
• 100% avalanche tested
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Drain Current -Continuous (TC = 25℃)
-Continuous (TC = 100℃)
IDM Drain Current – Pulsed
VGSS Gate-Source voltage
Single Pulsed Avalanche Energy (Note 2)
Power Dissipation (TC = 25℃)
Operating and Storage Temperature
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
-55 to +150
* Drain current limited by maximum junction temperature.
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
© 2015 Truesemi Semiconductor Corporation