TSF65R600WT
650V 7.5A N-Channel SJ-MOSFET
General Description
Truesemi SJ-FET is new generation of high voltage MOSFET family
that is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
Features
• 700V @TJ = 150 ℃
• Max. RDS(on) = 0.6Ω
• Ultra Low gate charge (typ. Qg = 14nC)
• 100% avalanche tested
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃)
-Continuous (TC = 100℃)
650
7.5*
4.7*
IDM Drain Current – Pulsed
(Note 1)
22*
VGSS Gate-Source voltage
±30
EAS
PD
TJ, TSTG
TL
Single Pulsed Avalanche Energy (Note 2)
Power Dissipation (TC = 25℃)
Operating and Storage Temperature
Range
Maximum Lead Temperature for Soldering
Purpose,1/8” from Case for 5 Seconds
160
29
-55 to +150
300
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
Typ.
RθJC Thermal Resistance, Junction-to-Case
--
RθJA Thermal Resistance, Junction-to-Ambient
--
Max.
4.3
62.5
Unit
V
A
A
V
mJ
W
℃
℃
Unit
℃/W
℃/W
© 2015 Truesemi Semiconductor Corporation
www.truesemi.com
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