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MA4AGSW5 - AlGaAs SP5T Reflective PIN Diode Switch

Description

M/A-COM’s MA4AGSW5 is an Aluminum-Gallium- Arsenide anode enhanced, SP5T PIN diode switch.

AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less loss than conventional GaAs processes, by as much as 0.3 dB reduction in insertion loss at 50 GHz.

Features

  • n n n MA4AGSW5 Layout n n n n Ultra Broad Bandwidth: 50 MHz to 50 GHz 1.7 dB Insertion Loss, 30 dB Isolation at 50 GHz Low Current comsumption. -10 mA for low loss state +10 mA for Isolation state M/A-COM’s unique patent pending AlGaAs hetero-junction anode technology. Silicon Nitride Passivation Polyamide Scratch protection.

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
MA4AGSW1 AlGaAs SPST Reflective PIN Diode Switch
MA4AGSW1A AlGaAs SPST Non-Reflective PIN Diode Switch
MA4AGSW2 AlGaAs SP2T PIN Diode Switch
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MA4AGSW4 AIGAAS SP4T PIN DIODE SWITCH

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www.DataSheet4U.com AlGaAs SP5T Reflective PIN Diode Switch V 1.00 MA4AGSW5 Features n n n MA4AGSW5 Layout n n n n Ultra Broad Bandwidth: 50 MHz to 50 GHz 1.7 dB Insertion Loss, 30 dB Isolation at 50 GHz Low Current comsumption. -10 mA for low loss state +10 mA for Isolation state M/A-COM’s unique patent pending AlGaAs hetero-junction anode technology. Silicon Nitride Passivation Polyamide Scratch protection Description M/A-COM’s MA4AGSW5 is an Aluminum-Gallium- Arsenide anode enhanced, SP5T PIN diode switch. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less loss than conventional GaAs processes, by as much as 0.3 dB reduction in insertion loss at 50 GHz.
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