MA4E2513-1289 Overview
and Applications The MA4E2513L-1289 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, microstrip transmission medium. The bination of silicon and glass allows HMIC devices to have...
MA4E2513-1289 Key Features
- Extremely Low Parasitic Capitance and Inductance
- Extremely Small “0301” (1000 x 300um) Footprint
- Surface Mountable in Microwave Circuits, No Wirebonds Required
- Rugged HMIC Construction with Polyimide Scratch Protection
- Reliable, Multilayer Metalization with a Diffusion
- Barrier, 100% Stabilization Bake (300°C, 16 hours)
- Lower Susceptibility to ESD Damage