MA4E2532M-1113 diodes equivalent, surmount low & medium barrier silicon schottky diodes.
Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protecti.
The MA4E2532 1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are recommended for use in.
The MA4E2532-1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or v.
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