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MA4E2532M-1113 Datasheet SURMOUNT Low & Medium Barrier Silicon Schottky Diodes

Manufacturer: Tyco Electronics (now TE Connectivity)

Download the MA4E2532M-1113 datasheet PDF. This datasheet also includes the MA4E2532L-1113 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MA4E2532L-1113_TycoElectronics.pdf) that lists specifications for multiple related part numbers.

General Description

The MA4E2532-1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.

HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium.

The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device.

Overview

SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series V 2.

Key Features

  • Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) n Lower Susceptibility to ESD Damage n n Case Style 1113 A B.

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