MA4E2501-1290 - SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes
and Applications The MA4E2501L-1290 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.
HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which ac
MA4E2501-1290 Features
* Extremely Low Parasitic Capitance and Inductance
* Extremely Small 0201 (600x300um) Footprint
* Surface Mountable in Microwave Circuits, No Wirebonds Required
* Rugged HMIC Construction with Polyimide Scratch Protection
* Reliable, Multilayer Metalization wi
