MA4E2532M-1113, MA4E2532L-1113 Datasheet - Tyco Electronics

MA4E2532M-1113 SURMOUNT Low & Medium Barrier Silicon Schottky Diodes

The MA4E2532-1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, whic.

MA4E2532M-1113 Features

* Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) n Lower Susceptibility

MA4E2532L-1113_TycoElectronics.pdf

MA4E2532M-1113 Datasheet Preview — This datasheet PDF includes multiple part numbers: MA4E2532M-1113, MA4E2532L-1113. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MA4E2532M-1113, MA4E2532L-1113

Manufacturer:

Tyco Electronics

File Size:

137.97 KB

Description:

Surmount low & medium barrier silicon schottky diodes.

Note:

This datasheet PDF includes multiple part numbers: MA4E2532M-1113, MA4E2532L-1113.
Please refer to the document for exact specifications by model.

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MA4E2532M-1113 MA4E2532L-1113 SURMOUNT Low Medium Barrier Silicon Schottky Diodes Tyco Electronics

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