MA4E2532M-1113 - SURMOUNT Low & Medium Barrier Silicon Schottky Diodes
The MA4E2532-1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.
HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, whic
MA4E2532M-1113 Features
* Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) n Lower Susceptibility
