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MA4E2514 SURMOUNT Low and Medium Barrier Silicon Schottky Diodes

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Description

SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair V 2.00 MA4E2514 Series Case Style 1116 .
The MA4E2514 SurMountTM Diode Tee series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Inte.

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Datasheet Specifications

Part number
MA4E2514
Manufacturer
Tyco Electronics
File Size
133.08 KB
Datasheet
MA4E2514_TycoElectronics.pdf
Description
SURMOUNT Low and Medium Barrier Silicon Schottky Diodes

Features

* A Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) n Lower Susceptibil

Applications

* The MA4E2514 Family of SurMount Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diode

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