MA4E2502 - Silicon Schottky Diode
and Applications The MA4E2502 Surmountâ„¢ Series diodes are silicon low, medium, and high barrier Schottky devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.
HMIC circuits consist of silicon pedestals which form diodes or via conductors embedded in a glass d
MA4E2502 Features
* Extremely Low Parasitic Capacitance & Inductance
* Surface Mountable in Microwavable Circuits, No Wirebonds Required
* Rugged HMIC Construction with Polyimide Scratch Protection
* Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (3