MA4E2508 - SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes
and Applications The MA4E2508 SurMountâ„¢ Anti-Parallel Diode Series are Silicon Low, Medium & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.
HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in
MA4E2508 Features
* Extremely Low Parasitic Capitance and Inductance
* Surface Mountable in Microwave Circuits, No Wirebonds Required
* Rugged HMIC Construction with Polyimide Scratch Protection
* Reliable, Multilayer Metalization with a Diffusion
* Barrier, 100% Stabilization