MA4E2502 Datasheet (Tyco Electronics) - Medium and High Barrier Silicon Schottky Diodes

MA4E2502, Medium and High Barrier Silicon Schottky Diodes

and Applications The MA4E2502 SurMountTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.

HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass

MA4E2502 Features

* Extremely Low Parasitic Capitance and Inductance

* Surface Mountable in Microwave Circuits, No Wirebonds Required

* Rugged HMIC Construction with Polyimide Scratch Protection

* Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300