MA4E2514 Datasheet (MACOM) - Low and Medium Barrier Silicon Schottky Diode

MA4E2514, Low and Medium Barrier Silicon Schottky Diode

The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process.

HMIC Circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielectric, which acts

MA4E2514 Features

* Extremely Low Parasitic Capitance and Inductance

* Surface Mountable in Microwave Circuits, No Wirebonds Required

* Rugged HMIC Construction with Polyimide Scratch Protection

* Reliable, Multilayer Metalization with a Diffusion Barrier, 100 % Stabilization Bake (300