MA4E2514 Low and Medium Barrier Silicon Schottky Diode

MACOM

Description

MA4E2514 Series SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair .
The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Inte.

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Datasheet Specifications

Part number: MA4E2514
Manufacturer: MACOM
File Size: 98.36 KB
Datasheet: MA4E2514-MACOM.pdf
Description: Low and Medium Barrier Silicon Schottky Diode

Features

* Extremely Low Parasitic Capitance and Inductance
* Surface Mountable in Microwave Circuits, No Wirebonds Required
* Rugged HMIC Construction with Polyimide Scratch Protection
* Reliable, Multilayer Metalization with a Diffusion Barrier, 100 % Stabilization Bake (300

Applications

* The MA4E2514 Family of Surmount Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diode

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MA4E2514 Low and Medium Barrier Silicon Schottky Diode MACOM

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