MAPLST2122-015CF - RF Power Field Effect Transistor

Tyco Electronics (now TE Connectivity)

Key Features

Designed for W-CDMA base station.

MAPLST2122-015CF rf power field effect transistor by Tyco Electronics (now TE Connectivity) - Datasheet Preview

Datasheet Details

Part number	MAPLST2122-015CF
Manufacturer	Tyco Electronics (now TE Connectivity)
File Size	261.53 KB
Description	RF Power Field Effect Transistor
Datasheet	MAPLST2122-015CF Datasheet

Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number	Description
MAPLST2122-030CF	RF Power Field Effect Transistor
MAPLST2122-060CF	RF Power Field Effect Transistor
MAPLST2122-090CF	RF Power Field Effect Transistor
MAPLST0810-030CF	RF Power Field Effect Transistor
MAPLST0810-045CF	RF Power Field Effect Transistor
MAPLST0810-090CF	RF Power Field Effect Transistor
MAPLST0822-002PP	RF Power Field Effect Transistor
MAPLST1617-030CF	RF Power Field Effect Transistor
MAPLST1820-030CF	RF Power Field Effect Transistor
MAPLST1820-060CF	RF Power Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 15W, 28V 8/20/03 Preliminary MAPLST2122-015CF Features Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications. Q Q Q Package Style 15W Output Power at P1dB (CW) 12dB Minimum Gain at P1dB (CW) W-CDMA Typical Performance: (28VDC, -45dBc ACPR, 5MHz offset, 4.096MHz BW) Q Output Power: 2.2W (typ.) Q Gain: 13dB (typ.) Q Efficiency: 17% (typ.) 10:1 VSWR Ruggedness (CW @ 15W, 28V, 2110MHz) MAPLST2122-015CF Q Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 54.