MAPLST2122-090CF - RF Power Field Effect Transistor

Tyco Electronics (now TE Connectivity)

Key Features

Q Package Style Designed for W-CDMA base station.

MAPLST2122-090CF rf power field effect transistor by Tyco Electronics (now TE Connectivity) - Datasheet Preview

Datasheet Details

Part number	MAPLST2122-090CF
Manufacturer	Tyco Electronics (now TE Connectivity)
File Size	190.54 KB
Description	RF Power Field Effect Transistor
Datasheet	MAPLST2122-090CF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V 4/6/2005 Preliminary MAPLST2122-090CF Features Q Package Style Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, W-CDMA and multicarrier power amplifier applications. 90W Output Power at P1dB (CW) 11dB Minimum Gain at P1dB (CW) W-CDMA Typical Performance: (28VDC, -45dB ACPR @ 4.096MHz) Q Output Power: 12W (typ.) Q Gain: 12dB (typ.) Q Efficiency: 16% (typ.