QM2607C1
Description
The QM2607C1 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
Key Features
- z Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent Cdv/dt effect decline
- Green Device Available Product Summery BVDSS 20V -20V RDSON 115mΩ 255mΩ ID 1.3 A -0.94 A
