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QM2606C1 Datasheet - UBIQ

N-Ch and P-Ch Fast Switching MOSFETs

QM2606C1 Features

* z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Product Summery BVDSS 20V -20V RDSON 90mΩ 240mΩ ID 1.52A -1A Applications z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Net

QM2606C1 General Description

The QM2606C1 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The QM2606C1 meet the RoHS and Green Product requirement with full function reliabil.

QM2606C1 Datasheet (389.54 KB)

Preview of QM2606C1 PDF

Datasheet Details

Part number:

QM2606C1

Manufacturer:

UBIQ

File Size:

389.54 KB

Description:

N-ch and p-ch fast switching mosfets.

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QM2606C1 N-Ch and P-Ch Fast Switching MOSFETs UBIQ

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