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P8008HVA
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 68mΩ @VGS = 10V
ID 3.2A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 80
Gate-Source Voltage
VGS ±25
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA= 70 °C
ID IDM
3.2 2.5 18
Avalanche Current
IAS 15.8
Avalanche Energy
L =0.1mH
EAS
12.5
Power Dissipation
TA = 25 °C TA= 70°C
PD
1.5 1
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Lead Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJL RqJA
TYPICAL
MAXIMUM 25 80
UNITS °C / W
REV 1.
P8008HVA Datasheet
