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P9006ESG Datasheet Preview

P9006ESG Datasheet

P-Channel Enhancement Mode MOSFET

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P9006ESG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = 10V
ID
-18A
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
-18
-12
-48
Avalanche Current
IAS -22
Avalanche Energy
L = 0.1mH
EAS
24
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
54
22
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1limited by maximum junction temperature.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
2.3 °C / W
Ver 1.0
1 2012/11/22




UNIKC

P9006ESG Datasheet Preview

P9006ESG Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

P9006ESG
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
-60
-1 -1.7 -3
±100
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -48V, VGS = 0V
VDS = -40V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
-48
-1
-10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -3.5A
VGS = -10V, ID = -4.5A
VDS = -5V, ID = -4.5A
70 135
54 90
12
DYNAMIC
Input Capacitance
Ciss
1070
Output Capacitance
Coss VGS = 0V, VDS = -25V, f = 1MHz
99
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -4.5A
VDS = -20V, ID @ -5A,
VGS = -10V, RGEN = 6Ω
64
22
3
6
9
15
36
11
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = -4.5A, VGS = 0V
-18
-1
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
IF = -4.5A,
dlF/dt = 100A / μS
19
14
2Independent of operating temperature.
UNIT
V
nA
mA
A
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/11/22


Part Number P9006ESG
Description P-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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