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20N60 Datasheet Preview

20N60 Datasheet

600V N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
20N60
20A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 20N60 is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide customers
with planar stripe and DMOS technology. This technology is
specialized in allowing a minimum on-state resistance and superior
switching performance. It also can withstand high energy pulse in
the avalanche and commutation mode.
The UTC 20N60 is universally applied in motor control, UPS, DC
choppers and switch-mode and resonant-mode power supplies.
FEATURES
* RDS(ON) < 0.45@ VGS=10V, ID=10A
* High switching speed
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
20N60L-T47-T
20N60G-T47-T
20N60L-T3P-T
20N60G-T3P-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-247
TO-3P
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2017 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-587.I




UTC

20N60 Datasheet Preview

20N60 Datasheet

600V N-CHANNEL POWER MOSFET

No Preview Available !

20N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
600 V
±30 V
Drain Current
Continuous
Pulsed
ID
IDM
20 A
80 A
Avalanche Energy
Power Dissipation
Single Pulsed(Note 2)
TO-247
TO-3P
EAS
PD
1200
370
416
mJ
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. VDD=50V, Starting TJ=25°С, Peak IAS=20A, L=6mH
THERMAL DATA
PARAMETER
Junction to Ambient
TO-247
TO-3P
Junction to Case
TO-247
TO-3P
SYMBOL
θJA
θJC
RATINGS
40
30
0.34
0.3
UNIT
°С/W
°С/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=600V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
600 V
10 µA
+100 nA
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=10A, Pulse test,
t300µs, duty cycle d2%
2 4.0 V
0.32 0.45
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1MHz
4500
330
140
pF
pF
pF
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=300V, ID=10A
(Note 1, 2)
VGS=10V, VDS=300V, ID=10A,RG=2,
(Note 1, 2)
170
40
85
110
130
800
170
nC
nC
nC
ns
ns
ns
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
Current
IS VGS=0V
Maximum Body-Diode Pulsed Current
ISM Repetitive
Drain-Source Diode Forward Voltage
VSD
IF=IS, VGS=0V, Pulse test,
t300µs, duty cycle d2%
Body Diode Reverse Recovery Time
trr IF=IS,VR=100V,-di/dt=100A/µs(Note 1)
Notes: 1. Pulse Test: Pulse width 300μs, Duty cycle2%
2. Essentially independent of operating temperature
20
80
1.5
600
A
A
V
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-587.I


Part Number 20N60
Description 600V N-CHANNEL POWER MOSFET
Maker UTC
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20N60 Datasheet PDF






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