4N60-Q Description
The UTC 4N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
4N60-Q Key Features
- RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A
- Fast Switching Capability
- Avalanche Energy Specified
- Improved dv/dt Capability, high RuggednessA
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