UNISONIC TECHNOLOGIES CO., LTD 4N60-Q 4A, 600V N-C.
Infineon
04N60C3 - Power Transistor
63'1 & 6381 & &RRO026 3RZHU7UDQVLVWRU )HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH VDS#Tjmax 9 5'6 .
JILIN SINO-MICROELECTRONICS
JCS4N60BB - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS4N60B MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson（Vgs=10V） 2.4Ω Qg 18.1nC LED APPLICATIO.
ETC
4N600 - N-Channel MOSFET
Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor 4N600(3600) Description The Bay Linear n-channel power field effect transisto.
JILIN SINO-MICROELECTRONICS
JCS4N60RE - N-CHANNEL MOSFET
R JCS4N60E JCS4N60E MAIN CHARACTERISTICS Package ID VDSS Rdson_max （Vgs=10V） Qg-typ 4.0 A 600 V 2.35Ω 11.8nC LED APPLICATIONS Hi.
Maple Semiconductor
4N60C - 600V N-Channel MOSFET
SLP4N60C / SLF4N60C SLP4N60C/SLF4N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stri.
WAYON
WMN14N60C2 - Super Junction Power MOSFET
WML14N60C2, WMK14N60C2, WMM14N60C2 WMN14N60C2, WMP14N60C2, WMO14N60C2 600V 0.36Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen.
Vishay
SiHH14N60E - E Series Power MOSFET
www.vishay.com SiHH14N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C Qg max. (nC) Qgs (nC.
ON Semiconductor
NDD04N60Z - N-Channel Power MOSFET
NDF04N60Z, NDD04N60Z Power MOSFET, N-Channel, 600 V, 2.0 W •FeLatouwreOsN Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Te.
Hi-Sincerity Mocroelectronics
H04N60 - N-Channel Power Field Effect Transistor
www.DataSheet4U.net HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/5 H04.
Fairchild Semiconductor
SSS4N60AS - Advanced Power MOSFET
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
GFD
4N60F - 600V N-Channel MOSFET
600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been .
KODENSHI
SCT04N60FD - 4A Standard Triac
SCT04N60FD Triac 600V, 4A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed.
UTC
14N60L - N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 14N60-TC 14A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 14N60-TC are N-Channel enhancement mode power field eff.
STMicroelectronics
24N60M2 - N-Channel MOSFET
STF24N60M2 Datasheet N-channel 600 V, 168 mΩ typ., 18 A MDmesh M2 Power MOSFET in a TO-220FP package Features Order code VDS @TJmax RDS(on) max. .
JILIN SINO-MICROELECTRONICS
JCS4N60E - N-CHANNEL MOSFET
R JCS4N60E JCS4N60E MAIN CHARACTERISTICS Package ID VDSS Rdson_max （Vgs=10V） Qg-typ 4.0 A 600 V 2.35Ω 11.8nC LED APPLICATIONS Hi.
JILIN SINO-MICROELECTRONICS
JCS4N60FE - N-CHANNEL MOSFET
R JCS4N60E JCS4N60E MAIN CHARACTERISTICS Package ID VDSS Rdson_max （Vgs=10V） Qg-typ 4.0 A 600 V 2.35Ω 11.8nC LED APPLICATIONS Hi.
CR Micro
CS24N60ANR - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS24N60ANR General Description： VDSS 600 V CS24N60 ANR, the silicon N-channel Enhanced ID 24 A VDMOSFETs, .
Wisdom technologies
WFD4N60 - N-Channel MOSFET
HIGH VOLTAGE N-Channel MOSFET WFU4N60/WFD4N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics.
