USG04R022M
USG04R022M is 40V N-CHANNEL SGT ENHANCEMENT POWER MOSFET manufactured by Unisonic Technologies.
DESCRIPTION
The UTC USG04R022M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.
- FEATURES
- RDS(ON) ≤ 2.2 mΩ @ VGS=10V, ID=20A
- RDS(ON) ≤ 3.2 mΩ @ VGS=4.5V, ID=20A
- Extremely low on-resistance RDS(ON)
- Excellent Low Ciss
- SYMBOL
- ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
USG04R022ML-T8A-R USG04R022MG-T8A-R TOLL-8A
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 123456789
Packing
G S S S S S S S S Tape Reel
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- MARKING
Preliminary
POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-471.a
Preliminary
POWER MOSFET
- ABSOLUTE MAXIMUM RATING (TC=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
Gate-Source...
