USG04R022M - 40V N-CHANNEL SGT ENHANCEMENT POWER MOSFET

Product Overview

UTC

USG04R022M 40V N-CHANNEL SGT ENHANCEMENT POWER MOSFET by UTC - Datasheet Preview — Datasheet preview – USG04R022M

Datasheet Details

Part number	USG04R022M
Manufacturer	UTC
File Size	238.49 KB
Description	40V N-CHANNEL SGT ENHANCEMENT POWER MOSFET
Datasheet	USG04R022M Datasheet
Additional preview pages of the USG04R022M datasheet.

Product details

Description

The UTC USG04R022M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.

Features

RDS(ON) ≤ 2.2 mΩ @ VGS=10V, ID=20A.
RDS(ON) ≤ 3.2 mΩ @ VGS=4.5V, ID=20A.
Extremely low on-resistance RDS(ON).
Excellent Low Ciss.
SYMBOL.

📁 Similar Datasheet

Other Datasheets by UTC

USG085R035H-T - 85V N-CHANNEL POWER MOSFET
USG120N10 - N-CHANNEL POWER MOSFET
USG170N03 - N-CHANNEL MOSFET
USG170N10 - N-CHANNEL POWER MOSFET
USG40N10 - N-CHANNEL POWER MOSFET
USG70N11 - N-CHANNEL MOSFET

Published: May 2, 2024 |