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USG40N10 - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC USG40N10 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.

Features

  • RDS(ON) ≤ 16 mΩ @ VGS=10V, ID=20A RDS(ON) ≤ 28 mΩ @ VGS=4.5V, ID=10A.
  • High Frequency Switching.
  • Synchronous Rectification 1 TO-220 1 PDFN5×6 1 TO - 252 1 PDFN3×3.
  • SYMBOL.

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Datasheet preview – USG40N10

Datasheet Details

Part number USG40N10
Manufacturer UTC
File Size 265.73 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet USG40N10 Datasheet
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UNISONIC TECHNOLOGIES CO., LTD USG40N10 Preliminary 48A, 100V N-CHANNEL POWER MOSFET POWER MOSFET  DESCRIPTION The UTC USG40N10 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC USG40N10 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.  FEATURES * RDS(ON) ≤ 16 mΩ @ VGS=10V, ID=20A RDS(ON) ≤ 28 mΩ @ VGS=4.
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