USG120N10 Overview
The UTC USG120N10 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC USG120N10 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.
USG120N10 Key Features
- RDS(ON) ≤ 4.5 mΩ @ VGS=10V, ID=20A RDS(ON) ≤ 6.5 mΩ @ VGS=6.0V, ID=20A
- High Switching Speed
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