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USG120N10 - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC USG120N10 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.

Features

  • RDS(ON) ≤ 4.5 mΩ @ VGS=10V, ID=20A RDS(ON) ≤ 6.5 mΩ @ VGS=6.0V, ID=20A.
  • High Switching Speed.
  • SYMBOL 2.Drain 1 TO-220 1 TO-263 1.Gate 3.Source.

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Datasheet Details

Part number USG120N10
Manufacturer UTC
File Size 169.09 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet USG120N10 Datasheet
Additional preview pages of the USG120N10 datasheet.

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UNISONIC TECHNOLOGIES CO., LTD USG120N10 Preliminary 120A, 100V N-CHANNEL POWER MOSFET POWER MOSFET  DESCRIPTION The UTC USG120N10 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC USG120N10 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.  FEATURES * RDS(ON) ≤ 4.5 mΩ @ VGS=10V, ID=20A RDS(ON) ≤ 6.5 mΩ @ VGS=6.0V, ID=20A * High Switching Speed  SYMBOL 2.Drain 1 TO-220 1 TO-263 1.Gate 3.
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