USG120N10 Datasheet N-CHANNEL POWER MOSFET

Manufacturer: Unisonic Technologies

USG120N10 n-channel power mosfet by Unisonic Technologies - Datasheet Preview

Datasheet Details

Part number	USG120N10
Manufacturer	Unisonic Technologies
File Size	169.09 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	USG120N10 Datasheet

General Description

The UTC USG120N10 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.

The UTC USG120N10 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.



Overview

UNISONIC TECHNOLOGIES CO., LTD USG120N10 Preliminary 120A, 100V N-CHANNEL POWER MOSFET POWER MOSFET.

Key Features

RDS(ON) ≤ 4.5 mΩ @ VGS=10V, ID=20A RDS(ON) ≤ 6.5 mΩ @ VGS=6.0V, ID=20A.
High Switching Speed.
SYMBOL 2.Drain 1 TO-220 1 TO-263 1.Gate 3.Source.

More Datasheets from Unisonic Technologies

Part Number	Description
USG170N03	N-CHANNEL MOSFET
USG170N10	N-CHANNEL POWER MOSFET
USG04R022M	40V N-CHANNEL SGT ENHANCEMENT POWER MOSFET
USG085R035H-T	85V N-CHANNEL POWER MOSFET
USG40N10	N-CHANNEL POWER MOSFET
USG70N11	N-CHANNEL MOSFET
USGR028N85	N-CHANNEL POWER MOSFET