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USG04R022M - 40V N-CHANNEL SGT ENHANCEMENT POWER MOSFET

Datasheet Summary

Description

The UTC USG04R022M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.

Features

  • RDS(ON) ≤ 2.2 mΩ @ VGS=10V, ID=20A.
  • RDS(ON) ≤ 3.2 mΩ @ VGS=4.5V, ID=20A.
  • Extremely low on-resistance RDS(ON).
  • Excellent Low Ciss.
  • SYMBOL.

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Datasheet Details

Part number USG04R022M
Manufacturer UTC
File Size 238.49 KB
Description 40V N-CHANNEL SGT ENHANCEMENT POWER MOSFET
Datasheet download datasheet USG04R022M Datasheet
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UNISONIC TECHNOLOGIES CO., LTD USG04R022M Preliminary 80A, 40V N-CHANNEL SGT ENHANCEMENT POWER MOSFET POWER MOSFET  DESCRIPTION The UTC USG04R022M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.  FEATURES * RDS(ON) ≤ 2.2 mΩ @ VGS=10V, ID=20A * RDS(ON) ≤ 3.2 mΩ @ VGS=4.5V, ID=20A * Extremely low on-resistance RDS(ON) * Excellent Low Ciss  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package USG04R022ML-T8A-R USG04R022MG-T8A-R TOLL-8A Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123456789 Packing G S S S S S S S S Tape Reel www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 7 QW-R209-471.
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