USG04R022M Description
The UTC USG04R022M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.
USG04R022M Key Features
- RDS(ON) ≤ 2.2 mΩ @ VGS=10V, ID=20A
- RDS(ON) ≤ 3.2 mΩ @ VGS=4.5V, ID=20A
- Extremely low on-resistance RDS(ON)
- Excellent Low Ciss
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