USG04R022M Datasheet 40V N-CHANNEL SGT ENHANCEMENT POWER MOSFET

Manufacturer: Unisonic Technologies

USG04R022M 40v n-channel sgt enhancement power mosfet by Unisonic Technologies - Datasheet Preview

Datasheet Details

Part number	USG04R022M
Manufacturer	Unisonic Technologies
File Size	238.49 KB
Description	40V N-CHANNEL SGT ENHANCEMENT POWER MOSFET
Datasheet	USG04R022M Datasheet

General Description

The UTC USG04R022M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.

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Overview

UNISONIC TECHNOLOGIES CO., LTD USG04R022M Preliminary 80A, 40V N-CHANNEL SGT ENHANCEMENT POWER MOSFET POWER MOSFET.

Key Features

RDS(ON) ≤ 2.2 mΩ @ VGS=10V, ID=20A.
RDS(ON) ≤ 3.2 mΩ @ VGS=4.5V, ID=20A.
Extremely low on-resistance RDS(ON).
Excellent Low Ciss.
SYMBOL.

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