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USG170N03 - N-CHANNEL MOSFET

Datasheet Summary

Description

The UTC USG170N03 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.

Features

  • RDS(ON) ≤ 2.64 mΩ @ VGS=10V, ID=30A RDS(ON) ≤ 4.1 mΩ @ VGS=4.5V, ID=25A.
  • Optimized for high speed switching, Logic level.
  • Enhanced Body diode dv/dt capability.
  • Enhanced Avalanche Ruggednessy.
  • SYMBOL Drain (5, 6, 7, 8) POWER MOSFET 1 DFN5060-8 Gate (4) Source (1, 2, 3).

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Datasheet Details

Part number USG170N03
Manufacturer UTC
File Size 259.80 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet USG170N03 Datasheet
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UNISONIC TECHNOLOGIES CO., LTD USG170N03 Preliminary 85A, 30V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET  DESCRIPTION The UTC USG170N03 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC USG170N03 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.  FEATURES * RDS(ON) ≤ 2.64 mΩ @ VGS=10V, ID=30A RDS(ON) ≤ 4.1 mΩ @ VGS=4.
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