USG170N03 Datasheet N-CHANNEL MOSFET

Manufacturer: Unisonic Technologies

USG170N03 n-channel mosfet by Unisonic Technologies - Datasheet Preview

Datasheet Details

Part number	USG170N03
Manufacturer	Unisonic Technologies
File Size	259.80 KB
Description	N-CHANNEL MOSFET
Datasheet	USG170N03 Datasheet

General Description

The UTC USG170N03 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.

The UTC USG170N03 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.

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Overview

UNISONIC TECHNOLOGIES CO., LTD USG170N03 Preliminary 85A, 30V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET.

Key Features

RDS(ON) ≤ 2.64 mΩ @ VGS=10V, ID=30A RDS(ON) ≤ 4.1 mΩ @ VGS=4.5V, ID=25A.
Optimized for high speed switching, Logic level.
Enhanced Body diode dv/dt capability.
Enhanced Avalanche Ruggednessy.
SYMBOL Drain (5, 6, 7, 8) POWER MOSFET 1 DFN5060-8 Gate (4) Source (1, 2, 3).

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