USG170N10 Description
The UTC USG170N10 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC USG170N10 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.
USG170N10 Key Features
- RDS(ON) ≤ 3.5 mΩ @ VGS=10V, ID=20A
- High Switching Speed
- SYMBOL
- ORDERING INFORMATION
- MARKING