USG170N10 Datasheet | Unisonic Technologies

DESCRIPTION The UTC USG170N10 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC USG170N10 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits. - FEATURES - RDS(ON) ≤ 3.5 mΩ @ VGS=10V, ID=20A - High Switching Speed - SYMBOL POWER MOSFET - ORDERING INFORMATION Ordering Number Lead Free Halogen Free USG170N10L-TA3-T USG170N10G-TA3-T USG170N10L-TF3-T USG170N10G-TF3-T USG170N10L-TQ2-T USG170N10G-TQ2-T USG170N10L-TQ2-R USG170N10G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-263 TO-263 Pin Assignment Packing Tube Tube Tube Tape Reel - MARKING .unisonic..tw Copyright © 2023 Unisonic Technologies Co.,...