USG70N11 Key Features
- RDS(ON) ≤ 12.5 mΩ @ VGS=10V, ID=15A RDS(ON) ≤ 19 mΩ @ VGS=4.5V, ID=8.0A
- Optimized for high speed switching, Logic level
- Enhanced Body diode dv/dt capability
- Enhanced Avalanche Ruggednessy
- SYMBOL
- ORDERING INFORMATION
- MARKING
- Part: USG70N11
- Description: N-CHANNEL MOSFET
- Manufacturer: Unisonic Technologies
- Size: 258.49 KB
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