USG70N11 - N-CHANNEL MOSFET

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UTC

USG70N11 N-CHANNEL MOSFET by UTC - Datasheet Preview — Datasheet preview – USG70N11

Datasheet Details

Part number	USG70N11
Manufacturer	UTC
File Size	258.49 KB
Description	N-CHANNEL MOSFET
Datasheet	USG70N11 Datasheet
Additional preview pages of the USG70N11 datasheet.

Product details

Description

The UTC USG70N11 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. APPLICATION Synchronous Rectification in SMPS Hard Switching and High Speed Circuit DC/DCin Telecoms and Inductrial

Features

RDS(ON) ≤ 12.5 mΩ @ VGS=10V, ID=15A RDS(ON) ≤ 19 mΩ @ VGS=4.5V, ID=8.0A.
Optimized for high speed switching, Logic level.
Enhanced Body diode dv/dt capability.
Enhanced Avalanche Ruggednessy.
SYMBOL Drain (5, 6, 7, 8) POWER MOSFET 1 DFN5060-8 Gate (4) Source (1, 2, 3).

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Published: Apr 22, 2020 |