UTG10N65-S igbt equivalent, 650v trench gate field-stop igbt.
* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=10A, VGE=15V
(TC =25°C)
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* FEATURES
* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=10.
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