Datasheet4U Logo Datasheet4U.com

12N70K-MT - N-CHANNEL POWER MOSFET

Description

The UTC 12N70K-MT are N-Channel enhancement mode power MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

These devices are suited for high efficiency switch mode power supply.

Features

  • RDS(ON) ≤ 0.83Ω @ VGS=10V, ID=6.0A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2019 Unisonic Technologies Co. , Ltd 1 of 7 QW-R205-028.G 12N70K-MT.

📥 Download Datasheet

📁 Similar Datasheet

  • 12N70-MH - N-CHANNEL POWER MOSFET (UTC)
  • 12N70-ML - 700V N-CHANNEL POWER MOSFET (UTC)
  • 12N035 - N-Channel Field Effect Transistor (BL)
  • 12N06AT - 60V N-Channel DTMOS (Unigroup)
  • 12N10P - N-CHANNEL MOSFET (CHONGQING PINGYANG)
  • 12N170K5 - N-channel Power MOSFET (STMicroelectronics)
  • 12N18 - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • 12N20 - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • 12N25 - N-CHANNEL POWER MOSFET (UTC)
  • 12N40 - N-CHANNEL POWER MOSFET (UTC)
Other Datasheets by Unisonic Technologies
  • 12N70 - N-CHANNEL POWER MOSFET
  • 12N06Z - 12A 60V N-CHANNEL POWER MOSFET
  • 12N10 - N-CHANNEL POWER MOSFET
  • 12N25V - 12A 250V N-CHANNEL POWER MOSFET
  • 12N30 - 12A 300V N-CHANNEL POWER MOSFET
  • 12N50 - N-CHANNEL POWER MOSFET
  • 12N50K-MT - N-CHANNEL POWER MOSFET
  • 12N60K-MT - N-CHANNEL POWER MOSFET

Full PDF Text Transcription

Click to expand full text
UNISONIC TECHNOLOGIES CO., LTD 12N70K-MT 12A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N70K-MT are N-Channel enhancement mode power MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored.  FEATURES * RDS(ON) ≤ 0.83Ω @ VGS=10V, ID=6.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-028.
Published: |