7N60K-MTQ Key Features
- RDS(ON) < 1.4Ω @ VGS = 10V, ID = 3.5A
- Fast switching capability
- Avalanche energy tested
- Improved dv/dt capability, high ruggedness
- SYMBOL
- ORDERING INFORMATION
- MARKING
- Part: 7N60K-MTQ
- Manufacturer: Unisonic Technologies (official site)
- Size: 242.46 KB
Other 7N60K-MTQ Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Nell Power Semiconductor |
7N60 | N-Channel Power MOSFET |
Unisonic Technologies |
7N60 | N-CHANNEL MOSFET |
KIA |
7N60 | N-CHANNEL MOSFET |
Inchange Semiconductor |
7N60 | N-Channel MOSFET |
| Xirun Xirun |
7N60 | 7A N-Channel Power MOSFET |
7N60K-MTQ Description
The UTC 7N60K-MTQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.