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Unisonic Technologies

MJE13001-Q Datasheet Preview

MJE13001-Q Datasheet

NPN SILICON TRANSISTOR

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UNISONIC TECHNOLOGIES CO., LTD
MJE13001-Q
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTOR
FEATURES
* Collector-base voltage: V(BR)CBO=600V
* Collector current: IC=0.2A
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
-
MJE13001G-Q-x-AB3-A-R
SOT-89
-
MJE13001G-Q-x-AB3-F-R
SOT-89
MJE13001L-Q-x-T92-F-B MJE13001G-Q-x-T92-F-B
TO-92
MJE13001L-Q-x-T92-F-K MJE13001G-Q-x-T92-F-K
TO-92
Note: Pin assignment: B: Base C: Collector E: Emitter
Pin Assignment
123
ECB
BCE
BCE
BCE
Packing
Tape Reel
Tape Reel
Tape Box
Bulk
MARKING
SOT-89
Lot Code
MJE13001G
1
Date Code
TO-92
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R221-023.B




Unisonic Technologies

MJE13001-Q Datasheet Preview

MJE13001-Q Datasheet

NPN SILICON TRANSISTOR

No Preview Available !

MJE13001-Q
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO 400 V
Collector-Base Voltage
VCBO 600 V
Emitter Base Voltage
VEBO 7 V
Collector Current
IC 200 mA
Collector Power Dissipation
SOT-89
TO-92
PC
550
750
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Base-Emitter Voltage
Collector Cutoff Cut-Off Current
Collector Emitter Cut-Off Current
Emitter Cutoff Cut-Off Current
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
Resistive Load
Storage Time
Fall Time
SYMBOL
BVCBO
BVCEO
BVEBO
VBE
ICBO
ICEO
IEBO
TEST CONDITIONS
IC=100μA, IE=0
IC=1mA, IB=0
IE=100μA, IC=0
IE=100 mA
VCB=600V, IE=0A
VCE=400V, IB=0
VEB=7V, IC=0A
MIN TYP MAX UNIT
600 V
400 V
7V
1.1 V
100 μA
200 μA
100 μA
hFE1*
hFE2
VCE(SAT)
VBE(SAT)
VCE=20 V, IC=20mA
VCE=10V, IC=0.25mA
IC=50mA, IB=10mA
IC=50mA, IB=10mA
10
5
70
0.5 V
1.2 V
fT IC=20mA,VCE=20V,f=1MHz 8
MHz
tS IC=50mA, IB1=-IB2=5mA,
tF VCC=45V
1.5 μs
0.3 μs
CLASSIFICATION OF hFE1*
RANK A B C D
RANGE 10-15 15-20 20-25 25-30
E
30-35
F
35-40
G
40-45
H
45-50
I
50-55
J
55-60
K
60-65
L
65-70
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R221-023.B


Part Number MJE13001-Q
Description NPN SILICON TRANSISTOR
Maker Unisonic Technologies
Total Page 3 Pages
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