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MJE13003-R - NPN SILICON TRANSISTOR

Description

These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical.

They are particularly suited for 115 and 220V applications in switch mode.

Features

  • S.
  • Reverse biased SOA with inductive load @ TC=100°C.
  • Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C.
  • 700V blocking capability.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD MJE13003-R NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.  FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C.
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